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* VCEO(sus) 400 V * Reverse Bias SOA with Inductive Loads @ TC = 100_C * Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) * 700 V Blocking Capability * SOA and Switching Applications Information.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator's, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES:
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
SWITCHMODE Series NPN Silicon Power Transistors
Designer'sTM Data Sheet
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 3 Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Emitter Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating
v 10%.
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VEBO
VCEV
RJC
RJA
IC ICM
IE IEM
IB IBM
PD
PD
TL
- 65 to + 150
Value
1.67
62.5
Max
75 600
275
700
400
MJE13005*
2 16
6 12
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS
2 4
4 8
9
*Motorola Preferred Device
CASE 221A-06 TO-220AB
Order this document by MJE13005/D
Watts mW/_C
Watts mW/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIII I I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJE13005
*Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS *ON CHARACTERISTICS SECOND BREAKDOWN *OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Crossover Time
Voltage Storage Time
Inductive Load, Clamped (Table 2, Figure 13)
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table 2)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz)
Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) (IC = 2 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) (IC = 2 Adc, IB = 0.5 Adc) (IC = 4 Adc, IB = 1 Adc) (IC = 2 Adc, IB = 0.5 Adc, TC = 100_C)
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) (IC = 2 Adc, VCE = 5 Vdc)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with base forward biased
Emitter Cutoff Current (VEB = 9 Vdc, IC = 0)
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0)
2
(IC = 2 A, Vclamp = 300 Vdc, IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C) (VCC = 125 Vdc, IC = 2 A, IB1 = IB2 = 0.4 A, tp = 25 s, Duty Cycle 1%) Characteristic
v
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICEV Cob hFE IS/b tsv fT td tfi tr tf tc ts Min 400 10 8 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4 0.025 0.16 0.32 Typ 0.9 0.4 1.7 0.3 65 -- -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 12 See Figure 11 Max 0.9 0.9 0.7 0.1 1.2 1.6 1.5 0.5 0.6 1 1 60 40 -- -- -- 4 4 1 1 5 -- mAdc mAdc MHz Unit Vdc Vdc Vdc pF s s s s s s s --
MJE13005
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 70 hFE , DC CURRENT GAIN 50 25C 30 20 - 55C TJ = 150C 2 TJ = 25C 1.6 IC = 1 A 1.2 2A 3A 4A
0.8
10 7 5 0.04 0.06
VCE = 2 V VCE = 5 V 0.1 0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP) 2 4
0.4
0 0.03
0.05
0.1
0.2 0.3 0.5 0.7 IB, BASE CURRENT (AMP)
1
2
3
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE(sat) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
1.3 VBE(sat) @ IC/IB = 4 VBE(on) @ VCE = 2 V TJ = - 55C 25C 0.7 25C 0.5 150C 0.3 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4
0.55 IC/IB = 4 0.45 TJ = - 55C 25C 0.25
1.1
0.9
0.35
0.15
150C
0.05 0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. Base-Emitter Voltage
Figure 4. Collector-Emitter Saturation Voltage
10 k VCE = 250 V IC, COLLECTOR CURRENT ( A) 1k TJ = 150C 100 125C 100C 10 75C 50C 25C 0.1 - 0.4 REVERSE FORWARD + 0.6 + 0.2 + 0.4 0 - 0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) C, CAPACITANCE (pF)
2k 1k 700 500 300 200 100 70 50 30 20 0.3 0.5 10 30 13 5 50 VR, REVERSE VOLTAGE (VOLTS) 100 Cob 300 Cib
1
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJE13005
ICPK 90% Vclamp IC tsv trv tc VCE IB 10% Vclamp 90% IB1 10% ICPK 2% IC Vclamp 90% IC tfi tti
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc)f In general, trv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.
TIME
Figure 7. Inductive Switching Measurements
t, TIME ( s)
0.1 0.05 0.02 0.01 0.04 td @ VBE(off) = 5 V
t, TIME ( s)
IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII III I I I I I I IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIII I IIIII III I I I I I I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIII I IIIII
Table 1. Typical Inductive Switching Performance
TC _C tsv ns trv ns tfi ns tti ns IC AMP 2 3 4 tc ns 25 100 25 100 25 100 600 900 650 950 550 850 70 110 100 240 140 330 160 350 80 130 60 100 180 320 200 350 220 390 60 100 70 110 100 160 NOTE: All Data recorded in the inductive Switching Circuit In Table 2. 1 0.5 tr 0.2 VCC = 125 V IC/IB = 5 TJ = 25C 0.1 0.2 0.4 1 2 4 IC, COLLECTOR CURRENT (AMP)
]
RESISTIVE SWITCHING PERFORMANCE
10 5 ts VCC = 125 V IC/IB = 5 TJ = 25C
2 1 0.5 0.3 0.2 0.1 0.04 tf
0.1
0.2
0.5
1
2
4
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
4
Motorola Bipolar Power Transistor Device Data
MJE13005
Table 2. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V 1N4933 0.001 F TEST CIRCUITS 5V PW DUTY CYCLE 10% tr, tf 10 ns 68 1k +5 V 1N4933 0.02 F 270 1k 2N2905 MJE200 47 100 1/2 W - VBE(off) VCC = 125 V RC = 62 D1 = 1N5820 or Equiv. RB = 22 +10 V 25 s
NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1
RESISTIVE SWITCHING
33 MJE210
VCC +125 V L MR826* RC RB IB T.U.T. - 4.0 V IC 5.1 k 51 Vclamp *SELECTED FOR 1 kV VCE D1 TUT RB SCOPE
33 1N4933 2N2222
1k
CIRCUIT VALUES
Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16
GAP for 200 H/20 A Lcoil = 200 H OUTPUT WAVEFORMS
VCC = 20 V Vclamp = 300 Vdc
TEST WAVEFORMS
IC IC(pk)
tf CLAMPED tf UNCLAMPED t2 t t1 tf
t1 ADJUSTED TO OBTAIN IC Lcoil (ICpk) t1 VCC t2 Lcoil (ICpk) Vclamp
Test Equipment Scope-Tektronics 475 or Equivalent
0 -8 V tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC
VCE
VCE or Vclamp TIME t2
t
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1 ZJC(t) = r(t) RJC RJC = 1.67C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 2 5 t, TIME (ms) 10 20 50 P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 100 200 500 1k
Figure 10. Typical Thermal Response [ZJC(t)]
Motorola Bipolar Power Transistor Device Data
5
MJE13005
The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown. 10 IC, COLLECTOR CURRENT (AMP) 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 5 7 10 20 30 50 70 100 MJE13005 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 400 1 ms dc 5 ms 500 s
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS
Figure 11. Forward Bias Safe Operating Area
4 IC(pk) , COLLECTOR CURRENT (AMP) TC 100C IB1 = 2.0 A 3
2
VBE(off) = 9 V
1 MJE13005 0 0 100 200 300 400 500 600 5V 3V 1.5 V 700 800
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete RBSOA characteristics.
VCE, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
Figure 12. Reverse Bias Switching Safe Operating Area
1 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
0.8
0.6
THERMAL DERATING
0.4
0.2 0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (C)
Figure 13. Forward Bias Power Derating
6
Motorola Bipolar Power Transistor Device Data
MJE13005
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 221A-06 TO-220AB ISSUE Y
Motorola Bipolar Power Transistor Device Data
7
MJE13005
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
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Motorola Bipolar Power Transistor Device Data
*MJE13005/D*
MJE13005/D

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